Degenerate electron gas effects in the modulation spectroscopy of pseudomorphic Al0.32Ga0.68As/In0.15Ga0.85As/GaAs high electron mobility transistor structures

Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures

The effects of the channel electron density on the interband optical transitions of strained (x50.6 and 0.65! and lattice-matched (x50.53) InxGa12xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate est...

MOCVD growth of GaN-based high electron mobility transistor structures

Effect of Li Ion Irradiation on Reliability of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor

AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

Electrochemical Capacitance-Voltage Analysis of Delta-Doped Pseudomorphic High-Electron-Mobility Transistor Material

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...